Chinese Optics Letters, Volume. 6, Issue 4, 268(2008)
810-nm InGaAlAs/AlGaAs double quantum well semiconductor lasers with asymmetric waveguide structures
The 810-nm InGaAlAs/AlGaAs double quantum well (QW) semiconductor lasers with asymmetric waveguide structures, grown by molecular beam epitaxy, show high quantum efficiency and high-power conversion efficiency at continuous-wave (CW) power output. The threshold current density and slope efficiency of the device are 180 A/cm2 and 1.3 W/A, respectively. The internal loss and the internal quantum efficiency are 1.7 cm2 and 93%, respectively. The 70% maximum power conversion efficiency is achieved with narrow far-field patterns.
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[in Chinese], [in Chinese], [in Chinese], [in Chinese]. 810-nm InGaAlAs/AlGaAs double quantum well semiconductor lasers with asymmetric waveguide structures[J]. Chinese Optics Letters, 2008, 6(4): 268
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