Journal of Atmospheric and Environmental Optics, Volume. 4, Issue 6, 469(2009)

Performance Characteristics of Novel Porous Silicon at Ambient Condition

Cheng-yin SHEN*, Xiao-qin XI, Qiao-ling DENG, and Yan-nan CHU
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    For the development of the ionizer with low discharge voltage and the photounit at ambient condition, a novel porous silicon(PS) fabricated by combining the electrochemical anodization in HF solution under light with hydrothermally iron-passivated is introduced. The characteristics of electron emission and photo-electricity response at ambient condition were studied. The results show that this PS can emit electrons steadily for 2[EQUATION]3 min, and there is positive output voltage ([EQUATION] 120 mV) in the dark and the negative output voltage ([EQUATION]30 mV) under illumination. This indicates that the novel PS holds a potential to be exploited as the ionizer with low discharge voltage and the special photounit at ambient condition.

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    SHEN Cheng-yin, XI Xiao-qin, DENG Qiao-ling, CHU Yan-nan. Performance Characteristics of Novel Porous Silicon at Ambient Condition[J]. Journal of Atmospheric and Environmental Optics, 2009, 4(6): 469

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    Paper Information

    Received: Apr. 20, 2009

    Accepted: --

    Published Online: May. 26, 2010

    The Author Email: Cheng-yin SHEN (hfscy@126.com)

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