In this paper, Ca modified ( Pb, La )TiOs films were deposited on Pt coated silicon substrates using an ArF excimer laser. The films are polycrystalline and exhibit good ferroelectric and pyroelectric properties at room temperature. Because of the Ca modification, the figures of merit of the films for both specific detectivity and voltage responsivity are almost comparable with those of c- axis oriented PbTiO3 or (Pb, La) TiO3 films on the MgO single crystal substrate. Since these good results are obtained from the films on silicon, it is therefore of significance for monolithic integrated infrared image sensors.