Based on the silicon dielectric cylindrical photonic crystal, the finite-difference time-domain (FDTD) method is used to investigate the inverse Goos-Hanchen (GH) shift of Gaussian beam at the photonic crystal interface. By adding a silicon lens on the lower surface of the photonic crystal, the influence of the incident angle of Gaussian beam, the curvature radius of the silicon lens and the temperature on the inverse GH shift of the photonic crystal is studied.The results show that the maximum inverse GH shift angle is larger than the geometric ideal total reflection angle. The addition of a silicon lens with the focus in the center of the photonic crystal surface can significantly enhance the inverse GH shift. When the curvature radius of the silicon lens is 170, the inverse GH shift increases by 1.7 times as much as that without the lens. The influence of temperature on the inverse GH shift of photonic crystal at different incident angles is studied. It is found that when the incident angle of Gaussian beam is 26 degrees, the inverse GH shift has a wide range of variation with temperature, and the linearity of variation curve is better, which is convenient for temperature monitoring.