The wavelength stabilization of the external cavity semiconductor laser with volume Bragg grating (VBG) as wavelength selected element was studied experimentally, and the experimental results of a continuous wave semiconductor laser array whose output power is 43.5 W were reported. The results of wavelength stabilization with different heat sink temperature were given; it is shown that the temperature controlling pressure of the semiconductor laser could be reduced efficiently. The red shifting of the locked wavelength was observed at this experiment, due to the output power increasing caused by the driving current rising. When the output power is increased to 34.5 W from zero, the red shift is about 0.56 nm, which is in accordance with the measured temperature characteristic of the VBG. The effect of the laser should be considered in the design and applications of the high power external cavity semiconductor laser, which is working at continuous wave or high duty cycle.