Electron bombarded active pixel sensor (EBAPS) is a hybrid vacuum-solid low-level-light device. Its performance and service life depend on the vacuum maintenance of the device to a certain extent. The reasons for the decline of vacuum degree of EBAPS devices were analyzed, the serious consequences of the deterioration of vacuum degree were deduced, and the means to improve and maintain the internal vacuum degree of EBAPS devices were put forward. By constructing an ultra-high vacuum degassing system, the degassing characteristics of the core components of EBAPS electronic sensitive complementary metal-oxide-semiconductor (CMOS) components were studied. According to the research results, the optimal degassing process parameters were obtained, which provided a technical basis for the preparation of EBAPS digital low-level-light devices.