Acta Optica Sinica, Volume. 39, Issue 6, 0614002(2019)
Optimization of Facet Reflectivity of 450-nm GaN-Based Semiconductor Lasers
We analyze and experimentally verify the impact of facet reflectivity on slope efficiency and output power of 450-nm GaN-based semiconductor lasers. The results reveal that for asymmetric resonator structures, the nonlinear effect of longitude spatial hole burning can be suppressed by optimizing the facet reflectivity, thereby improving the differential quantum efficiency and maximum output power of the device. A high slope efficiency of >1.3 W·A -1 is obtained at the facet reflectivity of 5%, and a high power output of 2.6 W is obtained at the operating current of 3 A.
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Weichuan Du, Junjie Kang, Yi Li, Hao Tan, Kun Zhou, Yao Hu, Liang Zhang, Zhao Wang, Linhui Guo, Songxin Gao, Deyong Wu, Chun Tang. Optimization of Facet Reflectivity of 450-nm GaN-Based Semiconductor Lasers[J]. Acta Optica Sinica, 2019, 39(6): 0614002
Category: Lasers and Laser Optics
Received: Sep. 12, 2018
Accepted: Feb. 25, 2019
Published Online: Jun. 17, 2019
The Author Email: Zhou Kun (zhoukun2011@sinano.ac.cn)