To achieve high reliability and low resistance ohmic contact is the premise of obtaining high performance silicon carbide power semiconductor devices, which directly determines the energy consumption level of power devices. Laser annealing has become a new generation of mainstream annealing technology for silicon carbide power devices due to its advantages of localization, fast temperature rise, flexible control, high precision and stable continuous energy output. The research progress of laser annealing of silicon carbide power devices are summarized at home and abroad in recent years, simulates and analyzes the light and heat transfer characteristics of laser annealing principle in detail. It also designs a 355 nm ultraviolet laser annealing experimental system and conducts laser annealing experiments on Ni/SiC. Under the condition of laser energy density of 2.55 J/cm2, and the specific contact resistance is 9.49×10-5 Ω·cm2. Research results provide theoretical and data support for laser annealing and performance improvement of SIC power devices.