The indium deposition situation and microcosmic structure in the indium bump photoresist hole are analyzed in the indium bump growth process of infrared detectors with different pixel pitches. The reason for the low indium bump under the condition of 10 m pixel pitch is explained. And the relationship between the pixel pitch and indium bump height after lift-off is given. For the indium bump growth of infrared detectors with a smaller pixel pitch of 10 m and below, the methods to solve the problem of indium bump height are presented. After using the new methods, the indium bump height can reach more than 5 m.