Optoelectronics Letters, Volume. 11, Issue 5, 342(2015)

Rabi oscillation generation in the microring resonator system with double-series ring resonators

Ahmad Noorden Ahmad Fakhrurrazi1... Chaudhary Kashif1, Bahadoran Mahdi1, Aziz Muhammad Safwan1, Jalil Muhammad Arif1, Tiong Ong Chee2, Ali Jalil1 and Yupapin Preecha3,* |Show fewer author(s)
Author Affiliations
  • 1Institute of Advance Photonics Science, Nanotechnology Research Alliance, Universiti Teknologi Malaysia, Johor Bahru 81300, Malaysia
  • 2Department of Mathematics, Universiti Teknologi Malaysia, Johor Bahru 81310, Malaysia
  • 3Advanced Studies Center, Faculty of Science, King Mongkut’s Institute of Technology Ladkrabang, Bangkok 10520, Thailand
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    In this paper, a microring resonator (MRR) system using double-series ring resonators is proposed to generate and investigate the Rabi oscillations. The system is made up of silicon-on-insulator and attached to bus waveguide which is used as propagation and oscillation medium. The scattering matrix method is employed to determine the output signal intensity which acts as the input source between two-level Rabi oscillation states, where the increase of Rabi oscillation frequency with time is obtained at the resonant state. The population probability of the excited state is higher and unstable at the optical resonant state due to the nonlinear spontaneous emission process. The enhanced spontaneous emission can be managed by the atom (photon) excitation, which can be useful for atomic related sensors and single-photon source applications.

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    Ahmad Fakhrurrazi Ahmad Noorden, Kashif Chaudhary, Mahdi Bahadoran, Muhammad Safwan Aziz, Muhammad Arif Jalil, Ong Chee Tiong, Jalil Ali, Preecha Yupapin. Rabi oscillation generation in the microring resonator system with double-series ring resonators[J]. Optoelectronics Letters, 2015, 11(5): 342

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    Paper Information

    Received: May. 14, 2015

    Accepted: --

    Published Online: Oct. 12, 2017

    The Author Email: Yupapin Preecha (kypreech@kmitl.ac.th)

    DOI:10.1007/s11801-015-5090-2

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