Laser & Optoelectronics Progress, Volume. 50, Issue 4, 42302(2013)
Bottom-Emitting Surface-Plasmon-Enhanced GaN-LED Based on the Sinusoidal Nano-Gratings
We investigate the GaN-LED epitaxial wafers whose central wavelength is 650 nm and propose a kind of bottom-emitting surface-plasmon-enhanced LED to improve its emission efficiency. This LED includes a SiO2 layer of low refractive index and a silver film coated on the sinusoidal wavy-patterned p-GaN layer in sequence. The Ag film is used to enhance the internal quantum efficiency and the SiO2 layer is employed to further improve the reflectivity of the upper surface of GaN-layer. And the transmissivity through the sapphire substrate whose thickness is optimized is very high. The emission efficiency of this structure is raised greatly.
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Zhang Haosu, Zhu Jun, Zhu Zhendong, Li Qunqing, Jin Guofan. Bottom-Emitting Surface-Plasmon-Enhanced GaN-LED Based on the Sinusoidal Nano-Gratings[J]. Laser & Optoelectronics Progress, 2013, 50(4): 42302
Category: Optical Devices
Received: Jan. 4, 2013
Accepted: --
Published Online: Apr. 7, 2013
The Author Email: Haosu Zhang (zhanghs08@mails.tsinghua.edu.cn)