Acta Optica Sinica, Volume. 41, Issue 8, 0823006(2021)

Increase of Goos-Hänchen Shift Based on Exceptional Optical Bound States

Feng Wu1,2, Jiaju Wu1, Zhiwei Guo1, Yong Sun1, Yunhui Li1, Haitao Jiang1、*, and Hong Chen1
Author Affiliations
  • 1Key Laboratory of Advanced Microstructure Materials, Ministry of Education, School of Physics Science and Engineering, Tongji University, Shanghai 200092, China
  • 2School of Optoelectronic Engineering, Guangdong Polytechnic Normal University, Guangzhou,Guangdong 510665, China
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    As a kind of typical optical resonant modes, optical bound states have been utilized to greatly increase the Goos-H?nchen shift. However, in most research work, researchers utilize transmission-type bound states to increase the Goos-H?nchen shift. Therefore, the peak value of the Goos-H?nchen shift is located at the maximum of the transmission spectrum (that is, the minimum of the reflection spectrum), and the corresponding reflectivity is very low, which is not conducive to the experimental measurement and practical application. This review describes the recent research progress of our group in using two kinds of strange optical bound states to increase the Goos-H?nchen shift. The first optical bound state is the continuum quasi bound state in the four-part grating-waveguide composite structure. The peak value of the Goos-H?nchen shift is located at the reflectance peak with 100% reflectance. The second bound state is the interface state in the photonic crystal heterojunction. The reflectivity of the interface state can be flexibly tuned by the degree of mismatching between the imaginary phases of photonic crystals. Although the peak value of the Goos-H?nchen shift is located at the reflectance dip, the reflectance can still reach 97.6%. These two strange optical bound states greatly increase the Goos-H?nchen shift while maintaining a high reflectivity, which overcomes the low reflection shortcomings of the traditional method of increasing the Goos-H?nchen shift. Because these two strange optical bound states have high reflectivity, the Goos-H?nchen shift will be easier to be measured experimentally, so it is expected to be applied to the design of various high-performance sensors, optical switches, optical storage devices, wavelength division multiplexing (demultiplexing) devices, and polarization splitter devices in the future.

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    Feng Wu, Jiaju Wu, Zhiwei Guo, Yong Sun, Yunhui Li, Haitao Jiang, Hong Chen. Increase of Goos-Hänchen Shift Based on Exceptional Optical Bound States[J]. Acta Optica Sinica, 2021, 41(8): 0823006

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    Paper Information

    Category: Optical Devices

    Received: Aug. 31, 2020

    Accepted: Nov. 2, 2020

    Published Online: Apr. 10, 2021

    The Author Email: Jiang Haitao (jiang-haitao@tongji.edu.cn)

    DOI:10.3788/AOS202141.0823006

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