For compact, low-cost and high-precision consideration, the filter films centered on 1.38 μm are fabricated on InP substrates and InGaAs detector by thermal evaporation. The optical properties, surface and interface morphology of the films are investigated by polarized light microscope, atomic force microscope (AFM) ,scanning electron microscope (SEM) and Fourier transform infrared spectroscopy (FTIR). It shows that the filter film contains a three-cavity Fabry-Perot structure, the same with the design, the centralwavelength of the passband is 1.38 μm and the peak of transmission is around 60%. Tested electrical performance results reveal that the fabrication process has no effect on current-voltage characteristics and noise of the device. The optical response testing shows that the integrated device has a better performance than the device separated with the filter film.