As a strong candidate for the new type of non-volatile memories and artificial synaptic devices, memristor has a huge development prospect in aerospace, Mars exploration and other space science and application fields. Once large-scale application of memristor requires extremely stringent radiation resistance performance for the memristors. In order to improve the radiation resistance of memristors, it is necessary to explore the radiation effect mechanism and develop an effective radiation resistance technology. This paper summarizes the research status and trends of irradiation effects on memristors, describes the mechanism and analysis method of irradiation damage of memristor, and focuses on the irradiation effects of the memristors with transition metal oxide material system. Additionally, the possibility of scientific problems and key technologies are discussed, so as to provide some ideas for the radiation hardening and space application of memristor.