Journal of Synthetic Crystals, Volume. 54, Issue 1, 34(2025)

Growth and Properties of Large Size Ultra High Purity Germanium Single Crystals

ZHAO Qingsong... NIU Xiaodong, GU Xiaoying and DI Juqing* |Show fewer author(s)
Author Affiliations
  • Anhui Advanced Optoelectronic Materials and Systems Industry Innovation Research Institute, Anhui Guangzhi Technology Co, Ltd, Chuzhou 239000, China
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    High purity germanium detectors have the advantages of high resolution, high detection efficiency and strong stability, and their applications are becoming increasingly widespread. However, the preparation of ultra high purity germanium single crystals, the key materials for high purity germanium detectors, is challenging due to the high purity and high quality requirements. The domestic technology for preparing ultra high purity germanium single crystals is still immature, and the quality of the prepared crystals is still not high enough. In this work, large size ultra high purity germanium single crystals were grown in hydrogen atmosphere using the Czochralski method and self-made equipment. The crystal properties were analyzed through low-temperature Hall measurement, dislocation measurement, and deep level impurity measurement. The results show that the net carrier concentration of the as-grown germanium crystals is less than 1×1010 cm-3, the deep level impurity concentration is less than 4.5×109 cm-3, the dislocation density is less than 5 000 cm-2, and the number of dislocation array is less than 3, which meet the requirements of ultra high purity germanium detectors. Finally, qualified crystals with a diameter of 85 mm and a length of 60 mm were obtained.

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    ZHAO Qingsong, NIU Xiaodong, GU Xiaoying, DI Juqing. Growth and Properties of Large Size Ultra High Purity Germanium Single Crystals[J]. Journal of Synthetic Crystals, 2025, 54(1): 34

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    Paper Information

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    Received: Sep. 20, 2024

    Accepted: Feb. 18, 2025

    Published Online: Feb. 18, 2025

    The Author Email: Juqing DI (Juqing.di@votinfrared.com)

    DOI:10.16553/j.cnki.issn1000-985x.2024.0228

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