Journal of Inorganic Materials, Volume. 38, Issue 9, 1005(2023)

Research Progress of Photoelectric Resistive Switching Mechanism of Halide Perovskite

Huajun GUO1...2, Shuailing AN2,3, Jie MENG2,3, Shuxia REN3, Wenwen WANG2, Zishang LIANG1,2, Jiayu SONG2,3, Hengbin CHEN2,3, Hang SU2,3 and Jinjin ZHAO2,* |Show fewer author(s)
Author Affiliations
  • 11. School of Mechanical Engineering, Shijiazhuang Tiedao University, Shijiazhuang 050043, China
  • 22. Hebei Key Laboratory of Inorganic Nano-materials, College of Chemistry and Materials Science, Hebei Normal University, Shijiazhuang 050024, China
  • 33. School of Materials Science and Engineering, Shijiazhuang Tiedao University, Shijiazhuang 050043, China
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    As a reversible, non-volatile, and resistive state mutation information storage and processing device, the resistive switching (RS) memory is expected to solve the inherent physical limitations of the traditional memory and von Neumann bottleneck, and has received widespread attention. Taking advantage of rapid carrier migration characteristics and excellent photoelectric conversion performance, halide perovskite optoelectronic RS memory devices present excellent resistive switching performance. In recent years, researches on storage and computing applications of the halide perovskite RS memory developed unprecedentedly; whereas, the working mechanisms of halide perovskite RS memory still remain unclear. This review analyzes the working mechanism of halide perovskite RS memory, compares the regulation characteristics of conduction filaments (CFs) and energy level matching (ELM), summarizes the constraints of various mechanisms, reveals the repeated formation and dissolution of CFs under light illumination and electric field, as well as Schottky barrier between the perovskite transfer layer and other layer, dominates the On/Off ratio, threshold (Set/Reset) voltage and performance stability of halide perovskite optoelectronic RS memory, and prospects the applications of halide perovskite RS memory in artificial intelligence bionic synapses, in-memory computing, and machine vision.

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    Huajun GUO, Shuailing AN, Jie MENG, Shuxia REN, Wenwen WANG, Zishang LIANG, Jiayu SONG, Hengbin CHEN, Hang SU, Jinjin ZHAO. Research Progress of Photoelectric Resistive Switching Mechanism of Halide Perovskite[J]. Journal of Inorganic Materials, 2023, 38(9): 1005

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    Paper Information

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    Received: Mar. 16, 2023

    Accepted: --

    Published Online: Mar. 6, 2024

    The Author Email: ZHAO Jinjin (jinjinzhao2012@163.com)

    DOI:10.15541/jim20230132

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