Chinese Journal of Lasers, Volume. 9, Issue 8, 498(1982)
Dynamic interference effect of reflectance of ion-implanted Si by intense CO2 laser radiation
Theory and experiment have shown dynamical interference of the reflectance of P+-implanted Si for He-Ne laser beam by CW CO2 laser annealing. Analysing the dependence of the reflection on the time, we have discovered that the epitaxial growth rate of Ion-implanted layer of Si is not uniform during the crystallization.
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Li Tuanheng. Dynamic interference effect of reflectance of ion-implanted Si by intense CO2 laser radiation[J]. Chinese Journal of Lasers, 1982, 9(8): 498