A monotonic compositionally graded hole reservoir layer (MCG-HRL) and a symmetric compositionally graded hole blocking layer (SCG-HBL) structures are proposed to optimize the electro-optical conversion efficiency and output power of the deep ultraviolet laser diode (DUV-LD). Crosslight software is used to simulate the DUV-LD with infrastructure, rectangular HRL (R-HRL), MCG-HRL, and MCG-HRL structures. The simulation results indicate that the MCG-HRL and SCG-HBL effectively contribute to the increased hole concentration in the quantum wells (QWs), reduce hole leakage in the n-type region, increase radiation recombination rate in the QWs, reduce threshold voltage and resistance, and increase electro-optical conversion efficiency and output power of the DUV-LD.