Acta Photonica Sinica, Volume. 34, Issue 3, 354(2005)

Measurement of the Photon Emission Characteristic of Silicon Avalanche Photodiode

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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    The temporal and photo-statistic characteristics of silicon APD photon emission were got experimentally by measuring its photon statistics under breakdown condition. Compared with corresponding Poisson distribution and thermal field photon statistic distribution, the photo-statistic distribution of APD photon emission with 10 ms bin time was found to be Super-Poisson distribution. The fluorescence spectrum of the APD photon emission was also achieved in experiment.

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Measurement of the Photon Emission Characteristic of Silicon Avalanche Photodiode[J]. Acta Photonica Sinica, 2005, 34(3): 354

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    Paper Information

    Category: Optoelectronics

    Received: Jan. 15, 2004

    Accepted: --

    Published Online: Jun. 12, 2006

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