Photonics Research, Volume. 6, Issue 1, 46(2018)

High-efficiency normal-incidence vertical p-i-n photodetectors on a germanium-on-insulator platform: publisher’s note

Yiding Lin1,2,4, Kwang Hong Lee2, Shuyu Bao1,2, Xin Guo1, Hong Wang1, Jurgen Michel2,3, and Chuan Seng Tan1,2、*
Author Affiliations
  • 1School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
  • 2Low Energy Electronic Systems (LEES), Singapore-MIT Alliance for Research and Technology, Singapore 138602, Singapore
  • 3Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
  • 4e-mail: liny0075@e.ntu.edu.sg
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    This publisher’s note reports corrections to Eq. (1) in [Photon. Res.5, 702 (2017)PRHEIZ2327-912510.1364/PRJ.5.000702].

    Keywords

    Equation (1) was corrected in the article [1] from Idark=BT1.5eEakT{exp[qV/(e2kT)]1}to Idark=BT1.5eEakT(eqV2kT1)The article [1] was corrected online as of 27 November 2017.

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    Yiding Lin, Kwang Hong Lee, Shuyu Bao, Xin Guo, Hong Wang, Jurgen Michel, Chuan Seng Tan. High-efficiency normal-incidence vertical p-i-n photodetectors on a germanium-on-insulator platform: publisher’s note[J]. Photonics Research, 2018, 6(1): 46

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    Paper Information

    Category: Errata

    Received: Nov. 28, 2017

    Accepted: --

    Published Online: Jul. 19, 2018

    The Author Email: Chuan Seng Tan (tancs@ntu.edu.sg)

    DOI:10.1364/PRJ.6.000046

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