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Optoelectronics Letters, Volume. 19, Issue 3, 155(2023)

Effect of growth interruption time on the quality of InAs/GaSb type-II superlattice grown by molecular beam epitaxy

Zhaojun LIU1... Lianqing ZHU2,*, Xiantong ZHENG2, Lidan LU2, Dongliang ZHANG2 and Yuan and LIU2 |Show fewer author(s)
Author Affiliations
  • 1School of Opto-Electronic Engineering, Changchun University of Science and Technology, Changchun 130022, China
  • 2Key Laboratory of the Ministry of Education for Optoelectronic Measurement Technology and Instrument, Beijing Information Science & Technology University, Beijing 100192, China
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    LIU Zhaojun, ZHU Lianqing, ZHENG Xiantong, LU Lidan, ZHANG Dongliang, and LIU Yuan. Effect of growth interruption time on the quality of InAs/GaSb type-II superlattice grown by molecular beam epitaxy[J]. Optoelectronics Letters, 2023, 19(3): 155

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    Paper Information

    Received: Nov. 17, 2022

    Accepted: Dec. 21, 2022

    Published Online: Mar. 18, 2023

    The Author Email: Lianqing ZHU (lqzhu_bistu@sina.com)

    DOI:10.1007/s11801-023-2196-9

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology