Infrared and Laser Engineering, Volume. 49, Issue 12, 20201057(2020)

Femtosecond laser induced microstructures in diamond and applications (Invited)

Huafeng Wang1, Ke Sun2, Shengzhi Sun3, and Jianrong Qiu2、*
Author Affiliations
  • 1Ningbo University of Finance & Economics, Ningbo 315175, China
  • 2College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, China
  • 3The Research Institute of Advanced Technologies, Ningbo University, Ningbo 315211, China
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    For many years, silicon and germanium have been considered the suited semiconductor materials for detectors and integrated optoelectronic devices fabrication. However, compared with diamond-based devices, such tetravalent semiconductors are less resistant to radiation damage, and the devices are less stable under harsh conditions or under high-energy light radiation. In recent years, due to the excellent optical and mechanical properties, diamond has become a promising material in the application of integrated photonics, sensors, and quantum optics etc. The laser-induced microstructures of diamond represents a powerful tool used for the development optical 3D-contacts devices all-carbon detectors graphite resistors on diamond, as well as the realization of single photon source. The physical mechanisms of femtosecond laser induced color center, graphitization and refractive index change in diamond were demonstrated. Based on this, the applications of the femtosecond laser induced micro-nano structures in diamond for single photon source, sensor and optical waveguide were introduced. Then, the future developing tendency in this field was prospected.

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    Huafeng Wang, Ke Sun, Shengzhi Sun, Jianrong Qiu. Femtosecond laser induced microstructures in diamond and applications (Invited)[J]. Infrared and Laser Engineering, 2020, 49(12): 20201057

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    Paper Information

    Category: 激光与物质相互作用

    Received: Oct. 17, 2020

    Accepted: --

    Published Online: Jan. 14, 2021

    The Author Email: Qiu Jianrong (qjr@zju.edu.cn)

    DOI:10.3788/IRLA20201057

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