Chinese Journal of Lasers, Volume. 46, Issue 4, 0403002(2019)
Effects of Annealing Temperature on Crystal Quality and Photoelectric Properties of Al-Doped ZnO Thin Film
The effects of annealing temperature on the photoelectric properties of Al-doped ZnO (AZO) film grown with atomic layer deposition (ALD) technique are investigated. It is found that the full width at half maximum of X-ray diffraction peaks of the AZO thin film decreases from 0.609° before annealing to 0.454° after annealing at 600 ℃, and the crystal quality is improved. The surface roughness of thin film reduces from 0.841 nm before annealing to 0.738 nm after annealing at 600 ℃. The carrier concentration and mobility ratio of the thin film annealed at 400 ℃ are the largest, and they are 1.9×10 19 cm -3 and 4.2 cm 2·V -1·s -1, respectively. However, as the annealing temperature continues to increase, the carrier concentration and mobility ratio decrease. With the annealing temperature increases from 300 ℃ to 600 ℃, the absorption edge of the thin film shows blue-shift at first and then red-shift.
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Deshuang Guo, Zinan Chen, Dengkui Wang, Jilong Tang, Xuan Fang, Dan Fang, Fengyuan Lin, Xinwei Wang, Zhipeng Wei. Effects of Annealing Temperature on Crystal Quality and Photoelectric Properties of Al-Doped ZnO Thin Film[J]. Chinese Journal of Lasers, 2019, 46(4): 0403002
Category: materials and thin films
Received: Nov. 19, 2018
Accepted: Jan. 8, 2019
Published Online: May. 9, 2019
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