In this study, the formation of a position-dependent conductivity transition in Cd1 -xZnxTe crystals is investigated. The results indicate that the transition from p-to n-type Cd1-xZnxTe (x = 0.04) can be ascribed to the formation of the VCd-Cdi interface. Cd vacancies (VCd) are easily generated in the Te-rich condition crystal growth process and are responsible for the p-type conductivity. However, Cd vacancies are filled and the n-type defect, Cd interstitial (Cdi), form in the Cd-rich condition. This leads to the transition from p-type to n-type conductivity during the growth of Cd1-xZnxTe (x = 0.04).