Acta Optica Sinica, Volume. 12, Issue 5, 426(1992)
Optical measurement of three-photon absorption coefficient in GaAs semiconductor
Using the nonlinear transmission (NLT) technique, the experimental investigation on. tlsrce-photon absorption processes in GaAs intrinsic semiconductor illuminated by a pulsed laser at 2.06μm is firstly described in this paper. Three-photon absorption and subsequent excited state absorption of the generated electrons and holes have been observed. Three-photon absorption coefficient has been measured and the experimental result is in good agreement with the theoretical value.
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[in Chinese], [in Chinese], [in Chinese], [in Chinese]. Optical measurement of three-photon absorption coefficient in GaAs semiconductor[J]. Acta Optica Sinica, 1992, 12(5): 426