A 8×8 silicon single-photon-avalanche-photodiode (SPAD) module for single photon detection was designed and fabricated. The silicon SPAD focal plane array using the N⁺-p-π-P⁺ structure works in the Geiger avalanche mode, and the pixel pitch was 200 μm. The SPAD pixel used the back reflecting mirror and micro-scattering structure to improve the photon detection efficiency at 1 064 nm wavelength. The readout integrated circuit (ROIC) combined the high voltage quenching, time-delayed reset, avalanche current detection, high voltage protection, and other functional circuits on a single chip。The 8×8 silicon SPAD module can detect a single photon. The test results show that the photon detection efficiency of the SPAD module at voltages in excess of 40 V was approximately 11.1% at a wavelength of 1 064 nm; the average dark count rate was 4.6 kHz; and after-pulse probability was 6.76% for a dead time of approximately 100 ns.