Laser & Optoelectronics Progress, Volume. 60, Issue 13, 1316019(2023)
High-Performance van der Waals Heterotunneling Device Based on PdSe2/InSe
Van der Waals heterojunctions made from two-dimensional materials offer competitive opportunities for designing and implementing multifunctional and high-performance electronic and optoelectronic devices. A pentagonal two-dimensional-layered noble metal transition metal disulfide molecular complex PdSe2 is used to construct a heterojunction capable of operating at room temperature, which has air stability and high electron field-effect mobility. InSe devices manufactured on rigid SiO2/Si substrates have a response time of approximately 50 ms, exhibiting long-term stability in optical switches, and can be performed on flexible substrates. Under the appropriate band alignment design of the Schottky junction and heterojunction, the heterostructure comprising PdSe2 and InSe exhibits a high reverse rectification ratio exceeding 106, ultralow forward current lower than pA at room temperature, and a high current on/off ratio exceeding 108. Therefore, the PdSe2/InSe van der Waals heterojunction can be used as an ultrasensitive photodetector, exhibiting apparent photovoltaic effects and spectral detection capability. This study provides a new approach to van der Waals integration and design based on two-dimensional materials and energy band alignment technology for photoelectric multifunctional equipment.
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Kexue Sun, Jianglin Li, Zefeng Chen, Jianbin Xu, Qiang Zhao. High-Performance van der Waals Heterotunneling Device Based on PdSe2/InSe[J]. Laser & Optoelectronics Progress, 2023, 60(13): 1316019
Category: Materials
Received: Jan. 3, 2023
Accepted: Mar. 7, 2023
Published Online: Jun. 29, 2023
The Author Email: Sun Kexue (sunkx@njupt.edu.cn)