Chinese Journal of Lasers, Volume. 37, Issue 12, 3140(2010)

Process Investigation of H4 Thin Film Prepared by Electron Beam Evaporation and Application on Laser Diodes Cavity Coatings

Liu Chunling1、*, Wang Chunwu1, Wang Guangde1, Qiao Zhongliang2, Jiang Wenlong1, Yao Yanping1, and Chen Wanjin3
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  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    H4 thin films (which is a compound of titanium oxide and lanthanum oxide,chemical formula is LaTiO3) have been prepared by the ion assisted electron beam depositing technology. The effect of the substrate temperature and oxygen gas stress influencing on the optical characteristics of H4 thin films have been investigated.It is found that the refractive index n dramatically increases with the substrate temperature building-up,the value of n808 nm is 2.14 at 100 ℃ of the substrate temperature; the extinction coefficient k has changed little with the oxygen pressure reduction, the value of k400 nm is 2×10-4 at 2.67×10-2 Pa of the oxygen pressure. The optimized parameters are applied to the preparation of high reflection mirror of 808 nm lasers, compared with the lasers using titanium oxide as HR films, have obtained a little better laser output characteristics. Therefore, it is a kind of new method of completely feasible that H4 thin films are used as high reflectivity facet coatings of laser diodes.

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    Liu Chunling, Wang Chunwu, Wang Guangde, Qiao Zhongliang, Jiang Wenlong, Yao Yanping, Chen Wanjin. Process Investigation of H4 Thin Film Prepared by Electron Beam Evaporation and Application on Laser Diodes Cavity Coatings[J]. Chinese Journal of Lasers, 2010, 37(12): 3140

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    Paper Information

    Category: materials and thin films

    Received: Jul. 5, 2010

    Accepted: --

    Published Online: Mar. 12, 2014

    The Author Email: Chunling Liu (lclwcw@yahoo.com.cn)

    DOI:10.3788/cjl20103712.3140

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