Since the internal defects of the through silicon via (TSV) three-dimensional package are hidden deeply inside the device and the package, they are difficult to be detected with conventional methods. However, TSV 3D packaging defects can show regular external characteristics under the condition of thermo-electric excitation. Therefore, TSV 3D packaging internal defect detection can be achieved by identifying these external features. In this paper, the combination of theory and finite element simulation were used to compare the temperature distribution of normal TSV and typical defective TSV, and significant differences were presented for defect identification. The analysis results show that among the three typical defects, the difference in temperature distribution between TSV with gaps and normal TSV is the smallest, the second is TSV with bottom cavity, and the largest difference is TSV with filling missing. It can be seen that by detecting the external temperature characteristics of the TSV package under thermo-electric coupling excitation, the internal defect diagnosis and location of the TSV three-dimensional package interconnect structure can be realized.