Semiconductor Optoelectronics, Volume. 41, Issue 2, 164(2020)
Self-powered Near-infrared Photodetector Based on Single-walled Carbon Nanotube/Graphene/GaAs Double Heterojunctions
In this paper, a self-powered near-infrared photodetector was fabricated based on a single-walled CNT (SWCNT) /graphene/GaAs double heterojunction structure. Due to the excellent photoelectric properties of GaAs and high carrier mobility of graphene, the photodetector exhibits a high photoresponsivity, detectivity and the on/off ratio of 393.8mA/W, 6.48×1011Jones and 103, respectively. More importantly, combing the near-infrared light absorption of SWCNTs with the photo-generated carriers effectively separated by the SWCNT/graphene heterojunction, the spectral response of the double heterojunction device is broadened to 1064nm, breaking through the absorption limit of GaAs itself.
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TAO Zejun, HUO Tingting, YIN Huan, SU Yanjie. Self-powered Near-infrared Photodetector Based on Single-walled Carbon Nanotube/Graphene/GaAs Double Heterojunctions[J]. Semiconductor Optoelectronics, 2020, 41(2): 164
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Received: Nov. 27, 2019
Accepted: --
Published Online: Jun. 17, 2020
The Author Email: Yanjie SU (yanjiesu@sjtu.edu.cn)