Chip, Volume. 3, Issue 1, 100079(2024)
A lateral AlGaN/GaN Schottky barrier diode with 0.36-V turn-on voltage and 10-kV breakdown voltage by using double-barrier anode structure
GaN power electronic devices, such as the lateral AlGaN/GaN Schottky barrier diode (SBD), have received significant attention in recent years. Many studies have focused on optimizing the breakdown voltage (BV) of the device, with a particular emphasis on achieving ultra-high-voltage (UHV, > 10 kV) applications. However, another important question arises: can the device maintain a BV of 10 kV while having a low turn-on voltage (Von)? In this study, the fabrication of UHV AlGaN/GaN SBDs was demonstrated on sapphire with a BV exceeding 10 kV. Moreover, by utilizing a double-barrier anode (DBA) structure consisting of platinum (Pt) and tantalum (Ta), a remarkably low Von of 0.36 V was achieved. This achievement highlights the great potential of these devices for UHV applications.
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Ru Xu, Peng Chen, Xiancheng Liu, Jianguo Zhao, Tinggang Zhu, Dunjun Chen, Zili Xie, Jiandong Ye, Xiangqian Xiu, Fayu Wan, Jianhua Chang, Rong Zhang, Youdou Zheng. A lateral AlGaN/GaN Schottky barrier diode with 0.36-V turn-on voltage and 10-kV breakdown voltage by using double-barrier anode structure[J]. Chip, 2024, 3(1): 100079
Category: Research Articles
Received: Aug. 16, 2023
Accepted: Dec. 11, 2023
Published Online: Jan. 23, 2025
The Author Email: Chen Peng (pchen@nju.edu.cn), Zhang Rong (rzhang@nju.edu.cn), Zheng Youdou (ydzheng@nju.edu.cn)