Chip, Volume. 3, Issue 1, 100079(2024)

A lateral AlGaN/GaN Schottky barrier diode with 0.36-V turn-on voltage and 10-kV breakdown voltage by using double-barrier anode structure

Ru Xu1...2, Peng Chen1,*, Xiancheng Liu1, Jianguo Zhao2, Tinggang Zhu3, Dunjun Chen1, Zili Xie1, Jiandong Ye1, Xiangqian Xiu1, Fayu Wan2, Jianhua Chang2, Rong Zhang1,** and Youdou Zheng1,*** |Show fewer author(s)
Author Affiliations
  • 1The Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
  • 2School of Electronic and Information Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, China
  • 3Corenergy Semiconductor Incorporation, Suzhou 215600, China
  • show less

    GaN power electronic devices, such as the lateral AlGaN/GaN Schottky barrier diode (SBD), have received significant attention in recent years. Many studies have focused on optimizing the breakdown voltage (BV) of the device, with a particular emphasis on achieving ultra-high-voltage (UHV, > 10 kV) applications. However, another important question arises: can the device maintain a BV of 10 kV while having a low turn-on voltage (Von)? In this study, the fabrication of UHV AlGaN/GaN SBDs was demonstrated on sapphire with a BV exceeding 10 kV. Moreover, by utilizing a double-barrier anode (DBA) structure consisting of platinum (Pt) and tantalum (Ta), a remarkably low Von of 0.36 V was achieved. This achievement highlights the great potential of these devices for UHV applications.

    Tools

    Get Citation

    Copy Citation Text

    Ru Xu, Peng Chen, Xiancheng Liu, Jianguo Zhao, Tinggang Zhu, Dunjun Chen, Zili Xie, Jiandong Ye, Xiangqian Xiu, Fayu Wan, Jianhua Chang, Rong Zhang, Youdou Zheng. A lateral AlGaN/GaN Schottky barrier diode with 0.36-V turn-on voltage and 10-kV breakdown voltage by using double-barrier anode structure[J]. Chip, 2024, 3(1): 100079

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category: Research Articles

    Received: Aug. 16, 2023

    Accepted: Dec. 11, 2023

    Published Online: Jan. 23, 2025

    The Author Email: Chen Peng (pchen@nju.edu.cn), Zhang Rong (rzhang@nju.edu.cn), Zheng Youdou (ydzheng@nju.edu.cn)

    DOI:10.1016/j.chip.2023.100079

    Topics