Laser & Optoelectronics Progress, Volume. 56, Issue 4, 040003(2019)
Development and Applications of GaAs-Based Near-Infrared High Power Semiconductor Lasers
The recent research achievements on high-power semiconductor lasers in various countries of the world are reviewed. The research progress is mainly introduced in terms of output power, brightness, electro-optical conversion efficiency, beam quality, lifetime, and reliability of GaAs-based near-infrared high-power semiconductor lasers. Combined with the current market analysis, the application prospect of these semiconductor lasers is elaborated. The development trend of high-power semiconductor lasers in the future is forecasted.
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Qinghe Yuan, Hongqi Jing, Qiuyue Zhang, Li Zhong, Suping Liu, Xiaoyu Ma. Development and Applications of GaAs-Based Near-Infrared High Power Semiconductor Lasers[J]. Laser & Optoelectronics Progress, 2019, 56(4): 040003
Category: Reviews
Received: Jul. 30, 2018
Accepted: Sep. 10, 2018
Published Online: Jul. 31, 2019
The Author Email: Ma Xiaoyu (maxy@semi.ac.cn)