Laser & Optoelectronics Progress, Volume. 54, Issue 11, 111602(2017)
Properties of GaAs0.9Sb0.1 Epilayer Grown by Two Growth Models of Liquid Phase Epitaxy Technique
GaAs0.9Sb0.1 epilayer is grown by two growth models of liquid phase epitaxy technique, and the two models are step-cooling and super-cooling, respectively. The crystal structure, cross-sectional image, and luminescence property of GaAs0.9Sb0.1 epilayer are studied with utilization of X-ray diffractometer, scanning electron microscope, and Raman spectometer. The results show that the growth rate of GaAs0.9Sb0.1 epilayer grown with step-cooling is slower than that with super-cooling, and GaAs0.9Sb0.1 epilayer grown by step-cooling exhibits higher-quality crystalline structure and smoother interface. However, the GaAs0.9Sb0.1 epilayer grown by the two growth models display substantially similar photoluminescence property.
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Xie Hao, Hu Shuhong, Wang Yang, Huang Tiantian, Pan Xiaohang, Sun Yan, Dai Ning. Properties of GaAs0.9Sb0.1 Epilayer Grown by Two Growth Models of Liquid Phase Epitaxy Technique[J]. Laser & Optoelectronics Progress, 2017, 54(11): 111602
Category: Materials
Received: May. 16, 2017
Accepted: --
Published Online: Nov. 17, 2017
The Author Email: Shuhong Hu (hush@mail.sitp.ac.cn)