Boron nitride (BN) films for high-frequency surface acoustic wave (SAW) devices are deposited on Ti/Al/Si(111) wafers by radio frequency (RF) magnetron sputtering. The structure of BN films is investigated by Fourier transform infrared (FTIR) spectroscopy and X-ray diffraction (XRD) spectra, and the surface morphology and piezoelectric properties of BN films are characterized by atomic force microscopy (AFM). The results show that when the flow ratio of nitrogen and argon is 2:18, the cubic BN (c-BN) film is deposited with high purity and c-axis orientation, and when the flow ratio of nitrogen and argon is 4:20, the hexagonal BN (h-BN) film is deposited with high c-axis orientation. Both particles are uniform and compact, and the roughnesses are 1.5 nm and 2.29 nm, respectively. The h-BN films have better piezoelectric response and distribution than the c-BN films.