Chinese Journal of Lasers, Volume. 20, Issue 3, 206(1993)
Gettering effect of laser induced damage on a silicon wafer backside
The gettering experiment of laser irradiation damage on the back surface of a silicon wafer is presented. It is observed by a microscope that the defects induced by laser after high temperature annealing are thermally stable. It is examined that the oxidation induced stacking faults and the minority carrier lifetime are affected by laser damage gettering. The gettering effect is studied by neutron activation analysis.
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[in Chinese], [in Chinese]. Gettering effect of laser induced damage on a silicon wafer backside[J]. Chinese Journal of Lasers, 1993, 20(3): 206