Infrared and Laser Engineering, Volume. 46, Issue 7, 704002(2017)
Study on performance of InAlSb infrared photodiode
The InAlSb/InSb material of p-i-n structure was grown by Molecular Beam Epitaxy(MBE) on(100) InSb substrate. The current suppression effect of the barrier layer on the dark current was verified by growing a barrier layer with a wide gap between the absorber layer and the contact layer. The electrical properties of photodiode fabricated by InAlSb epitaxial material were compared with that of traditional InSb bulk material. When the external bias voltage is -0.1 V, the reverse bias current of p+-p+-n--n+ InAlSb device and p+- n--n+ InAlSb device is 3.4×10-6 A·cm-2 and 7.8×10-6 A·cm-2 at 77 K, respectively. The p+-p+-n--n+ InAlSb device suppresses the dark current at a very low level. It provides an important foundation for improving operating temperature of the infrared detector.
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Zhu Xubo, Li Mo, Chen Gang, Zhang Lixue, Cao Xiancun, Lv Yanqiu. Study on performance of InAlSb infrared photodiode[J]. Infrared and Laser Engineering, 2017, 46(7): 704002
Category: 红外技术及应用
Received: Nov. 11, 2016
Accepted: Dec. 3, 2016
Published Online: Sep. 21, 2017
The Author Email: Xubo Zhu (xubo613@163.com)