An aluminum-free InGaAs/InGaAsP/InGaP single quantum well (SQW) laser diode (LD) is grown by low-pressure MOCVD. The P-I-V characteristics of Al-free and Al-containing 980-nm InGaAs lasers are tested in temperature range of 30-70 ℃. The variations with temperature of the two different LDs’ characteristic parameters, including output power, threshold current, slope efficiency, and the wavelength, are analyzed contrastively. The reliability experiments on the InGaAs/InGaAsP/InGaP laser diodes are also carried out.