Acta Optica Sinica, Volume. 5, Issue 8, 679(1985)
Optogalvanic effect of ArII in HCD
An experimental investigation of the optogalvanio effect of ArII in an HOD lamp by using an Ar+ laser, with its Ising line at 514.5nm, 496.5nm, and 476.5nm separately is reported. By considering various effects, such as ionization, recombination, and other mechanism of excited ions, we propose a simplified model which can be used to explain experimental results satisfactorily. The possibility of measuring some parameters of discharge plasmas in low-possibility of measuring optogalvanio effect is also suggested.
Get Citation
Copy Citation Text
LI SHIFANG, YIN LIFENG, HU QIQUAN, ZHANG YANPING, LIN FUCHENG. Optogalvanic effect of ArII in HCD[J]. Acta Optica Sinica, 1985, 5(8): 679