Acta Physica Sinica, Volume. 69, Issue 18, 184211-1(2020)

Research progress of low-dimensional semiconductor materials in field of nonlinear optics

Rui-Xue Bai1,2, Jue-Han Yang1, Da-Hai Wei1, and Zhong-Ming Wei1、*
Author Affiliations
  • 1State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
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    Since the first ruby laser was invented, researchers have focused their attention on how to achieve a strong laser light source, which cannot be produced by the ordinary light sources. Since then, the rich and colorful characteristics of nonlinear optical materials have been discovered, such as the saturation absorption, reverse saturation absorption and nonlinear refraction. They are applied to optoelectronic devices, optical switching devices and optical communication. At the same time, with the increase of the requirements for device integration performance in industrial production, ordinary three-dimensional devices are difficult to meet the production requirements, and the advent of low-dimensional semiconductor devices effectively solves this problem. Therefore, the combination of nonlinear optics and low-dimensional semiconductor materials is a general trend. The emergence of quantum dots, quantum wire lasers, and amplifiers confirms this. In this paper, we summarize the frontier work on nonlinear optics by selecting several special low-dimensional structures and several materials, providing some references for future research. However, due to the fact that the instability and low filling ratio of low-dimensional materials remain to be improved, further relevant research is still required.

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    Rui-Xue Bai, Jue-Han Yang, Da-Hai Wei, Zhong-Ming Wei. Research progress of low-dimensional semiconductor materials in field of nonlinear optics[J]. Acta Physica Sinica, 2020, 69(18): 184211-1

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    Paper Information

    Received: Feb. 11, 2020

    Accepted: --

    Published Online: Jan. 5, 2021

    The Author Email:

    DOI:10.7498/aps.69.20200206

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