Acta Optica Sinica, Volume. 6, Issue 7, 650(1986)

Infrared absorption spectra of plasma-anodized germanium dioxide film on a monocrystal wafer

LIU CHUNRONG1 and Ql ZHENZHONG2
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  • 1[in Chinese]
  • 2[in Chinese]
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    This paper describes the anodization of germanium in an oxygen-plasma excited by a high-frequency electromagnetic field. The refractive index of the plasma-anodized GeO2 film is about 1. 66. The transmittance of the oxide film on Ge was measured on an IR-450S type infrared spectrophotometer. The experiments show that infrared absorption bands of the GeO2 film are at 870cm-1 and 560 cm-1. The stretching constant of the Ge-O bond α (439N/m) and the Ge-O-Ge bond angle θ(129°) were calculated from the infrared were calculated from the infrared absorption data together with the edges of vibration bands predicted by the center-force-network model of Sen and Thorpe.

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    LIU CHUNRONG, Ql ZHENZHONG. Infrared absorption spectra of plasma-anodized germanium dioxide film on a monocrystal wafer[J]. Acta Optica Sinica, 1986, 6(7): 650

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    Paper Information

    Category: Thin Films

    Received: Nov. 26, 1985

    Accepted: --

    Published Online: Sep. 16, 2011

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