Semiconductor Optoelectronics, Volume. 43, Issue 3, 505(2022)
Effects of Thickness of Dual ModerateTemperatureGrown AlN Interlayers on Surface Morphology and Crystalline Quality of SemiPolar (1122) AlN Epilayer
A series of semipolar (1122) AlN epilayers have been grown on (1010) mplane sapphire substrates with the help of dual moderatetemperaturegrown (MTG) AlN interlayers by metalorganic chemical vapor deposition (MOCVD). Significant improvements in both surface morphology and crystalline quality of the semipolar (1122) AlN epilayers have been achieved with the insertion of the MTGAlN interlayers due to the formation of nanoscale patterned substratelike structure and the reduction in the basalplane stacking faults and their associated partial dislocations. The effect of the variation in the thickness of the MTGAlN interlayer ranged from 20 to 100nm was investigated in detail based on the characterization results of atomic force microscopy (AFM) and Xray diffraction. It was revealed that all the semipolar AlN epilayer samples were uniquely [1122]oriented regardless of the variation in the thickness of the MTG AlN interlayer. It was found that the most remarkable reduction in surface roughness and the most notable improvement in crystalline quality could be obtained when the thickness for the inserted dual MTGAlN interlayers was approximately 80nm.
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CUI Jia, LUO Xuguang, ZHANG Xiong, CUI Yiping. Effects of Thickness of Dual ModerateTemperatureGrown AlN Interlayers on Surface Morphology and Crystalline Quality of SemiPolar (1122) AlN Epilayer[J]. Semiconductor Optoelectronics, 2022, 43(3): 505
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Received: May. 27, 2022
Accepted: --
Published Online: Aug. 1, 2022
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