Acta Optica Sinica, Volume. 30, Issue 10, 2967(2010)

Well Width Dependence of Band Gap Renormalization of Single ZnO/MgZnO Quantum Well

Li Xiaolong1、*, Jiang Xiaofang1, Lei Xiaoyan1, Qiu Zhiren1, Zhang Baoping2, Ding Cairong1, and Zeng Xueran1
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  • 1[in Chinese]
  • 2[in Chinese]
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    Band gap renormalization of ZnO/Mg0.1Zn0.9O single quantum well (QW) with gradual well width (Lw) is studied by room-temperature time integrated photoluminescence (PL) spectra at high excitation power density. The photo-generated carrier density is n=1.6×1014 cm-2 and the magnitude of red shift of PL spectrum peak increases from 5.9 meV to 97.1 meV with Lw changing from 2.3 nm to 4.3 nm. With Lw increaseing, the red shift increases but the increase rate gradually decreases. When Lw>2αB(αB, the exciton Bohr radius of ZnO bulk, is about 2 nm), the red shift starts to be gradually saturated. It is found that the red shift is the competition result of energy gap contraction due to many body effect and intraband filling effect at high excitation power density. The result is useful for designing and application of ZnO QW-based optoelectronic devices.

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    Li Xiaolong, Jiang Xiaofang, Lei Xiaoyan, Qiu Zhiren, Zhang Baoping, Ding Cairong, Zeng Xueran. Well Width Dependence of Band Gap Renormalization of Single ZnO/MgZnO Quantum Well[J]. Acta Optica Sinica, 2010, 30(10): 2967

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    Paper Information

    Category: Materials

    Received: Oct. 15, 2009

    Accepted: --

    Published Online: Oct. 24, 2012

    The Author Email: Xiaolong Li (Lee2015@163.com)

    DOI:10.3788/aos20103010.2967

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