Acta Photonica Sinica, Volume. 50, Issue 9, 0930001(2021)

Electron Temperature Diagnostics in Microwave Plasma Chemical Vapor Deposition by Optical Emission Spectroscopy

Chi CHEN, Chaoyang ZHANG, Wenjie FU, Dun LU, Tongxing HUANG, and Yang YAN
Author Affiliations
  • School of Electronic Science and Engineering and Terahertz Science, University of Electronic Science and Technology of China, Chengdu610054, China
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    The electron temperature of the Ar/CH4 plasma was diagnosed under the pressure of 40~80 Pa and the microwave power of 400~800 W by Optical Emission Spectrometry (OES). The experimental results show that the electron temperature obtained by the OES is between 0.75 eV and 4 eV under the above experimental conditions. Through measurement of Ar or CH4 plasma, it is feasible to use the OES method in microwave coaxial plasma with carbon-containing gas. This research can further expand the application of the OES method in the PECVD field.

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    Chi CHEN, Chaoyang ZHANG, Wenjie FU, Dun LU, Tongxing HUANG, Yang YAN. Electron Temperature Diagnostics in Microwave Plasma Chemical Vapor Deposition by Optical Emission Spectroscopy[J]. Acta Photonica Sinica, 2021, 50(9): 0930001

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    Paper Information

    Category: Spectroscopy

    Received: Mar. 21, 2021

    Accepted: May. 25, 2021

    Published Online: Oct. 22, 2021

    The Author Email:

    DOI:10.3788/gzxb20215009.0930001

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