Acta Photonica Sinica, Volume. 35, Issue 8, 1133(2006)
Study on the Characteristics of Q-switching Nd∶YVO4 Laser with GaAs Grown at Low Temperature
A diode-pumped passively Q-switched Nd∶YVO4 laser was demonstrated by using GaAs film growing at a low temperature. The threshold power at the Q-switching is 2 W. The shortest pulse duration is 15 ns. The highest single pulse energy is 4.84 μJ and the highest peak power is 330 W. The repetition rate varies between 220 kHz and 360 kHz and the highest average output power is 1.16 W.
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Jiang Qichang, Zhuo Zhuang, Wang Yonggang, Li Jian, Su Yanli, Ma Xiaoyu, Zhang Zhigang, Wang Qingyue. Study on the Characteristics of Q-switching Nd∶YVO4 Laser with GaAs Grown at Low Temperature[J]. Acta Photonica Sinica, 2006, 35(8): 1133
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Received: Apr. 18, 2005
Accepted: --
Published Online: Jun. 3, 2010
The Author Email: Zhuang Zhuo (z.zhuo@sduln.com.cn)
CSTR:32186.14.
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