High power 808nm laser diodes are widely used for pumping Nd∶YAG solid-state lasers. In this paper the design, fabrication and the test results of 17 kW GaAs/AlGaAs stack laser diode arrays are reported. In order to achieve higher power, one of approaches is to use a broad waveguide structure, which effectively reduces the intensity on the facets and allows for higher output power. The structures were grown by metalorganic chemical vapor deposition. The output power of 100 W of 1 cm monolithic laser bars with a 80% filled factor has been abtained; Additionally, the stack structure was used. The laser diode array comprises 160 bars. The pitch of bars is 0.5 mm. The output power of 17 kW has been abtained. The emitting peak wavelength is 807.6 nm and FHWM is 4.9 nm.