Chinese Journal of Lasers, Volume. 33, Issue 12, 1671(2006)
Measurement of Thermal Relaxation Time of High Power Semiconductor Lasers
Based on lasing wavelength red-shift of semiconductor lasers due to junction temperature rising in pulsed operations, time-resolved spectra were measured by adjusting Boxcar gate position related to the current pulse. The thermal relaxation times of TO-can and cm-Bar array AlGaAs laser were obtained to be 66 μs and 96 μs, respectively. The measured dynamic thermal characteristics are of significance for pumping solid-state lasers.
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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Measurement of Thermal Relaxation Time of High Power Semiconductor Lasers[J]. Chinese Journal of Lasers, 2006, 33(12): 1671