Chinese Journal of Lasers, Volume. 33, Issue 12, 1671(2006)

Measurement of Thermal Relaxation Time of High Power Semiconductor Lasers

[in Chinese]*, [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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    Based on lasing wavelength red-shift of semiconductor lasers due to junction temperature rising in pulsed operations, time-resolved spectra were measured by adjusting Boxcar gate position related to the current pulse. The thermal relaxation times of TO-can and cm-Bar array AlGaAs laser were obtained to be 66 μs and 96 μs, respectively. The measured dynamic thermal characteristics are of significance for pumping solid-state lasers.

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Measurement of Thermal Relaxation Time of High Power Semiconductor Lasers[J]. Chinese Journal of Lasers, 2006, 33(12): 1671

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    Paper Information

    Category: measurement and metrology

    Received: Apr. 14, 2006

    Accepted: --

    Published Online: Dec. 30, 2006

    The Author Email: (chengcan@siom.ac.cn)

    DOI:

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