The pulsed laser crystallization of silicon carbon (SiC) thin films has been implemented by XeCl excimer laser. Raman scattering spectroscopy of the as-deposited and post annealing films has been analyzed The effect of laser energy on nano-SiC films structure and phase characterization has been studied The result shows that Raman peaks of crystalline nano-SiC nlms become broad and exist red-shift comparing with that of bulk SiC. The separation into crystalline silicon and carbon accompanying SiC crystallization is identified by the Raman measurement It has been shown that the crystallinty of annealed films increase with laser energy, while the degree of phase separation decreases.