Acta Photonica Sinica, Volume. 47, Issue 4, 423002(2018)
Design of Triple-mesa InGaAs/InP Avalanche Photodiode with Low Edge Electric Field
To eliminate the edge breakdown and reduce the dark current of conventional InGaAs/InP avalanche photodiode, a novel avalanche photodiode with triple-mesa structure was proposed. The effects of edge distance, doping concentration and thickness of charge layer and multiplication layer on the device performance were systematically investigated by a commercial simulator. The simulation results shown that the device was possessed of low edge electric field and reasonable device size, when the edge distance was 8 μm. In this design, the high electric field was confined within the center of device and the breakdown voltage was improved. The edge electric field of optimized device was only 2.6×105V/cm, which was a half of central region at 40 V reverse voltage. What’s more, it can reduce dark current to 9.25 pA at 0.9 Vbr, which was only 1/3 for the dark current of traditional double-mesa avalanche photodiode.
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ZHU Shuai-yu, XIE Sheng, CHEN Yu. Design of Triple-mesa InGaAs/InP Avalanche Photodiode with Low Edge Electric Field[J]. Acta Photonica Sinica, 2018, 47(4): 423002
Received: Nov. 28, 2017
Accepted: --
Published Online: Mar. 15, 2018
The Author Email: Shuai-yu ZHU (zhushuaiyu1126@163.com)