Acta Photonica Sinica, Volume. 39, Issue 10, 1738(2010)

Electron Ultrafast Relaxation Process in Semiconductor Nanoparticles

CHEN Zhen-yu, LIANG Rui-sheng*, HUANG Shu-liang, LIAO Hao-xiang, and MA Zhi-jian
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    To study the dynamic process excited by femtsecond laser,a carrier model with three energy level and trap is constructed,with which the electron rate equation is obtained.The numerical simulation is used to calculate the electron number change of each energy level and the differentiated absorbtion rate as the time goes by.With the change of the electron’s absorption cross-section,differentiated absorbtion rate will have a ultrafast change process.Compared with the experimental result of Fanxin Wu,the differentiated absorbtion rate curves are basically the same,which shows the model have some rationality.

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    CHEN Zhen-yu, LIANG Rui-sheng, HUANG Shu-liang, LIAO Hao-xiang, MA Zhi-jian. Electron Ultrafast Relaxation Process in Semiconductor Nanoparticles[J]. Acta Photonica Sinica, 2010, 39(10): 1738

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    Paper Information

    Received: Oct. 28, 2009

    Accepted: --

    Published Online: Dec. 7, 2010

    The Author Email: Rui-sheng LIANG (liangrs@scnu.edu.cn)

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