Laser & Optoelectronics Progress, Volume. 54, Issue 11, 112601(2017)
Optical Absorption Property of Graphene PN Junction Modulated by Voltage in Terahertz Region
Based on the method to constitute a PN junction with the addition of external positive and negative voltages at both ends of graphene sheets, the relationships among the optical conductivity and optical absorption with the external voltage, disorder broadening width, and temperature are studied by adjusting the gate and bias voltages. The study results show that the optical conductivity of graphene has negative value in the terahertz region and the light transmissivity increases. In the terahertz region, the optical conductivity depends on the external bias voltage and the disorder broadening width monotonously, but on the temperature complicatedly. Under a given applied voltage, the optical transmissivity can be enhanced if an appropriate temperature is chosen. The study results provide theoretical references for the applications of graphene in the terahertz region.
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Yang Cuihong, Wang Lu, Chen Yunyun, Lei Yong. Optical Absorption Property of Graphene PN Junction Modulated by Voltage in Terahertz Region[J]. Laser & Optoelectronics Progress, 2017, 54(11): 112601
Category: Physical Optics
Received: May. 9, 2017
Accepted: --
Published Online: Nov. 17, 2017
The Author Email: Cuihong Yang (chyang@nuist.edu.cn)